creat by art - low power loss, high efficiency - ideal for automated placement - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 v v rms 24 31 35 42 63 70 105 v v dc 35 45 50 60 90 100 150 v i f(av) a i rrm a 0.88 0.78 0.98 0.88 dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1309057 version: i13 mbrs1035ct thru mbrs10150ct taiwan semiconductor dual common cathode schottk y rectifier features - moisture sensitivity level: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: to-263ab (d 2 pak) to-263ab (d 2 pak) polarity: as marked weight: 1.37 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbrs 1035 ct mbrs 1045 ct mbrs 1050 ct mbrs 1060 ct mbrs 1090 ct a mbrs 10100 ct mbrs 10150 ct unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 120 a peak repetitive reverse surge current (note 1) maximum average forward rectified current 10 peak repetitive forward current (rated vr, square wave, 20khz) i frm 10 maximum instantaneous forward voltage (note 2) i f = 5 a, t j =25 i f = 5 a, t j =125 i f = 10 a, t j =25 i f = 10 a, t j =125 v f v 0.70 0.80 0.85 0.57 ma 5 0.65 0.75 0.80 0.90 0.95 0.67 0.75 0.85 voltage rate of change (rated v r ) 10000 typical thermal resistance operating junction temperature range - 55 to +150 maximum reverse current @ rated vr t j =25 t j =100 t j =125 i r 0.1 storage temperature range - 55 to +150 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle 1 15 10 - - 2
part no. part no. mbrs1060ct mbrs1060ct mbrs1060ct (ta=25 unless otherwise noted) document number: ds_d1309057 version: i13 mbrs1035ct thru mbrs10150ct taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing mbrs10xxct (note 1) prefix "h" rn suffix "g" d 2 pak 800 / 13" paper reel c0 d 2 pak 50 / tube note 1: "xx" defines voltage from 35v (mbrs1035ct) to 150v (mbrs10150ct) example preferred p/n aec-q101 qualified packing code green compound code description mbrs1060ct rn rn mbrs1060ct rng rn g green compound mbrs1060cthrn h rn aec-q101 qualified ratings and characteristics curves 0 2 4 6 8 10 12 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload 0 30 60 90 120 150 180 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse a current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=75 tj=125 tj=25 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 instantaneous forward a current (a) forward voltage (v) fig. 3 typical forward characteristics per leg MBRS1050CT-1060ct mbrs1035ct-1045ct mbrs10150ct mbrs1090ct-10100ct
min max min max a - 10.5 - 0.413 b 14.60 15.88 0.575 0.625 c 2.41 2.67 0.095 0.105 d 0.68 0.94 0.027 0.037 e 2.29 2.79 0.090 0.110 f 4.44 4.70 0.175 0.185 g 1.14 1.40 0.045 0.055 h 1.14 1.40 0.045 0.055 i 8.25 9.25 0.325 0.364 j 0.36 0.53 0.014 0.021 k 2.03 2.79 0.080 0.110 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1309057 version: i13 mbrs1035ct thru mbrs10150ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 16.9 suggested pad layout symbol unit (mm) a 10.8 b8.3 unit (inch) 0.425 f9.5 g2.5 marking diagram c1.1 d3.5 e 0.327 0.043 0.138 0.665 0.374 0.098 0 100 200 300 400 500 600 700 800 900 1000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance a ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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